Credits: 3+0 = 3, Pre-requisite: EEE 308

Course content

Introduction: Nano-dimension and paradigm, definitions, background and current practice. Technology transitions from more-Moore beyond CMOS towards more-than-Moore heterogeneous integration technologies. Nanofabrication & characterization: Brief processing steps of Nano-devices fabrication, Nano-lithographic and Nano-characterization techniques. Techniques of nanomaterial growth: Top down and bottom up approaches, molecular electronics, nanocrystal growth, self-assembly and self-organization. CMOS nanotechnology: Scaling of transistors dimension, Advances in Microelectronics—From Microscale to Nanoscale Devices and non-classical nano-MOSFET structures.   Carbon based nanotechnology: The geometry of nanoscale carbons, formation, band structure, structural and electronic properties; Fullerenes: Families of fullerenes, reactivity and potential applications; Carbon nanotubes: Molecular and supra-molecular structure, properties of single wall and multi wall carbon nanotubes, synthesis and characterization, applications. Nanotechnology in magnetic systems: Magneto resistive materials and devices and nano-magnetic storages. 2D electronics: The Challenging Promise of 2D Materials for Electronics, 2D Layered Materials: From Materials Properties to Device Applications: paradigm shift from Single-crystalline, poly-crystalline and amorphous silicon/germanium thin film towards III-V materials; Metal oxide thin films and molybdenum-di-sulfide material system. Bionanotechnology: Brief introduction to the integration of conventional nanoelectronics with life sciences, biomimetic nanostructures, bimolecular motors and biosensors.

Course rationale

Nanotechnology is behind many cutting edge electronic devices that find applications in diverse areas such as modern computer processors, data storage devices and biosensors. This course provides a comprehensive understanding of nanotechnology by covering material growth, nanoscale device fabrication and characterization techniques. Students will have an in-depth understanding of existing CMOS (complementary metal-oxide semiconductor) technology as well as exploratory materials such as carbon based nanotechnology, 2D materials and group III-V semiconductors.

Course objectives

The objectives of the course are to

1. Discuss history of scaling in CMOS technology from microscale to nanoscale
2. Explain the challenges of fabricating nanoscale transistors and discuss the future of scaling
3. Discuss nanoscale device fabrication, nanolithography and device characterization techniques 
4. Discuss the challenges and opportunities of nanotechnology based on emerging materials such as carbon, 2D materials and group III-V semiconductors
5. Explain nanoscale storage technologies using magnetic systems
6. Explain the application of nanotechnology for biomedical applications

Course outcomes

At the end of the course, the students are expected to demonstrate knowledge and understanding of:

1. Explain nanoscale fabrication and characterization
2. Describe different types of nanomaterials and/or nanostructures and their applications
3. Discuss advances in microelectronics from microscale to nanoscale
4. Molecular electronics, nanoscale optoelectronics/photonics, MEMS, NEMS etc.

Credits: 3+1=4, Pre-requisites: None

Course content

Introduction to circuit variables and circuit elements, Ohm’s law, Kirchhoff’s current and voltage laws, voltage and current division, series and parallel combination of resistances and sources, Wye-Delta transformation. Nodal and mesh analysis. Circuit theorems, superposition, source transformation, Thevenin’s, Norton’s and maximum power transfer theorems. Fundamental properties of capacitors and inductors, natural and step response of RC and RL circuits.

The course includes lab work including open-ended lab based on theory taught.

Course rationale

Electrical circuit analysis covers the fundamental methods and principles required for the design and analysis of electrical engineering devices and systems. This course forms the backbone of most other advanced EEE courses. This course arms the students with the fundamentals and prepares them for the exciting world of electrical engineering.

Course objectives

The objectives of the course are to

1. Enable the students understand the concepts of various circuit variables and elements
2. Develop capability to solve direct current resistive circuit problems using different analysis techniques and circuit theorems
3. Enable the students to analyze natural and step responses of RC and RL circuits
4. Develop capability of the students to build basic electrical circuits and operate circuit lab equipment
5. Develop capability of the students to solve DC circuits using computer aided design (CAD) tools

Course outcomes

At the end of the course, the students are expected to

1. Explain concepts of voltage, current, power, energy, sources, resistance, energy storage elements and circuit configurations
2. Apply different analysis techniques and circuit theorems for solution of DC resistive circuits
3. Analyze natural and step responses of RL and RC circuits
4. Build basic electrical circuits and operate fundamental circuit lab equipment
5. Use computer aided design (CAD) tool to simulate DC circuits

Mapping of course outcomes (COs) into the program outcomes (POs)

Credits: 3+1=4, Pre-requisite: EEE 201

Course content

Diode: physical operation, terminal characteristics, circuit analysis, and applications. Zener diode: physical operation, terminal characteristics, and application as voltage regulator. BJT: physical operation, terminal characteristics, biasing, small and large signal models. MOSFET: physical operation, terminal characteristics, threshold voltage, body effect, early effect, biasing and Q-point analysis, small signal models, amplification and amplifier configurations.

The course includes lab work based on theory taught including open ended labs.

Course rationale

One of the core requirements for students studying electrical engineering is to develop an in-depth understanding of basic electronic circuits that include electronic devices such as diodes, BJTs, and MOSFETs. The course aims to develop students’ skills for analysis of such circuits.

Course objectives

The objectives of the course are to

1. Explain the working principle and terminal behavior of basic semiconductor devices: diodes, BJTs, and MOSFETs.
2. Perform DC analysis of the circuits containing semiconductor devices and passive elements.
3. Perform analysis of diode rectifier and voltage regulator circuits.
4. Perform analysis of the biasing circuits of BJT and MOSFET amplifiers.
5. Analyze the BJT and MOSFET amplifier circuits to find gain and input and output impedances.

Course outcomes

At the end of the course, the students are expected to

1. Explain the operation and terminal characteristics of diodes, BJTs, and MOSFETs.
2. Analyze the diode, BJT, and MOSFET circuits with DC only or DC and AC sources.
3. Analyze the BJT and MOSFET amplifier circuits to evaluate amplifiers’ performance parameters.
4. Build and simulate electronic circuits and perform measurements using electronic equipment.

Mapping of course outcomes (COs) into the program outcomes (POs)