Dr. Anisul Haque

Professor
Department of Electrical and Electronic Engineering

Faculty

Faculty of Sciences and Engineering

Address

A/2, Jahurul Islam Avenue
Jahurul Islam City, Aftabnagar
Dhaka-1212, Bangladesh

Office

Ext: 303 || Room No#
ahaque@ewubd.edu

Academic Background

PhD, Clarkson University, USA
MS, Texas A & M University, USA
MSc, BUET
BSc, BUET

Dr. Anisul Haque is working as a professor in the Department of Electrical and Electronic Engineering, East West University since 2006. He has also served as the Chairperson of the Department of EEE and the Dean of the Faculty of Sciences and Engineering. Before joining East West University, he taught at the Electrical and Electronic Engineering Department, BUET for eighteen years. He has been a visiting faculty at Tokyo Institute of Technology, Japan, University of Connecticut, USA and Clarkson University, USA. Dr. Haque’s research interests include the physics, modeling, simulation and characterization of nanoelectronic devices and photovoltaic devices and systems. He is also interested in engineering education. Dr. Haque is the recipient of the Bangladesh University Grants Commission Award in 2006 and the gold medal from the Bangladesh Academy of Science in 2010. Dr. Haque was an editor of IEEE Transactions on Electron Devices from 2010 to 2019. He also served as an associate editor of IEEE Access from 2013 to 2023. He has been serving as an IEEE Distinguished Lecturer since 2009. He is also in the Board of Accreditation for Engineering and Technical Education (BAETE), Institute of Engineers, Bangladesh (IEB) as a board member. Dr Haque has conducted many training and workshop sessions on Outcomes Based Education (OBE) for academic program leaders and on Outcomes Based Accreditation (OBA) for BAETE program evaluators.

Professional Experience

Professor, EEE, East West University 2006 - present

Professor/Associate Professor/Assistant Professor/Lecturer, EEE, BUET 1987 - 2005

Research Interest

Photovoltaic devices and systems
Modeling, simulation and characterization of semiconductor devices
Engineering education

Selected Publications

Journal Publication

Z. Wang, S. Nasrin, R. Islam, Anisul Haque, and M. A. Karim, “Emerging memories and their applications in neuromorphic computing,” in Nanoelectronics: Physics, Materials, and Devices, A. Sarkar, C. K. Sarkar, A. Deyasi, D. De, A. Benfdila, Editors, Elsevier Inc., pp. 305 – 357, 2023 (Invited)
M. S. Ahmed, M. R. Khan, Anisul Haque, and M. R. Khan, “Agrivoltaics analysis in a techno-economic framework: Understanding why agrivoltaics on rice will always be profitable,” Applied Energy, Vol. 323, p. 119560, 2022
J. B. Jahangir, M. Al-Mahmud, M. S. S. Shakir, Anisul Haque, M. A. Alam, and M. R. Khan, “A critical analysis of solar farm configurations: theory and experiments,” IEEE Access, Vol. 10, pp. 47726-47740, 2022.
S. K. Maity, Anisul Haque and S. Pandit, “Charge-based compact drain current modeling of InAs-OI-Si MOSFET including subband energies and band nonparabolicity,” IEEE Transactions on Electron Devices, Vol. 67, No. 6, pp. 2282 – 2289, 2020.
R. A. Khan, M. R. Mahmood and Anisul Haque, “Enhanced Energy Extraction in an Open Loop Single-Axis Solar Tracking PV System with Optimized Tracker Rotation about Tilted Axis,” Journal of Renewable and Sustainable Energy, Vol. 10, No. 4, pp. 045301(1-11), 2018.
M. M. Islam, Md. N. K. Alam, Md. S. Sarker, Md. R. Islam and Anisul Haque, “An Analytical Model for the Gate C-V Characteristics of UTB III‒V-on-insulator MIS Structure," IEEE Journal of the Electron Devices Society, Vol. 5, No. 5, pp. 335 – 339, 2017.
N. G. Mim, S. B. Kutub and Anisul Haque, “Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices,” Results in Physics, Vol. 6, pp. 233–234, 2016.
Urmita Sikder and Anisul Haque, “Optimization of idealized quantum dot intermediate band solar cells considering spatial variation of generation rates”, IEEE Access, Vol. 1, pp. 363-370, 2013
A. T. M. Golam Sarwar, M. R. Siddiqui, Md. M. Satter, and Anisul Haque, “On the enhancement of the drain current in Indium rich InGaAs surface channel MOSFETs”, IEEE Transactions on Electron Devices, vol. 59, no. 6, pp.1653-1660, 2012
Md. M. Satter, A. E. Islam, D. Varghese, M. A. Alam, and Anisul Haque, “A Self-Consistent Algorithm to Extract Interface Trap States of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics , Vol. 56, No. 1, pp. 141-147, 2011
Md. M. Satter and Anisul Haque, “Modeling Effects of Interface Trap States on the Gate C-V Characteristics of MOS Devices on Alternative High-Mobility Substrates”, Solid-State Electronics, Vol. 54, No. 6, pp. 621-627, 2010
M. A. Karim and Anisul Haque, “A Physically Based, Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nano-Scale MOSFETs”, IEEE Transactions on Electron Devices, Vol. 57, No. 2, pp. 496 – 502, 2010
A. I. Khan, M. K. Ashraf, and Anisul Haque, “Wave function penetration effects on ballistic drain current modeling and MOSFET scaling”, Journal of Applied Physics, Vol. 105, No. 6, pp. 064505(1-5), 2009
M. K. Ashraf, A. I. Khan, and Anisul Haque, “Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces”, Solid-State Electronics, Vol. 53, No. 3, pp. 271 – 275, 2009
D. Plumwongrot, T. Maruyama, Anisul Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai, “Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures”, Japanese Journal of Applied Physics, Vol. 47, Part 1, No. 5A, pp. 3735-3741, 2008
A. M. Sonnet, M. A. Khayer and Anisul Haque, “Analysis of compressively strained GaInAsP/InP quantum wire electro-absorption modulators”, IEEE Journal of Quantum Electronics, Vol. 43, No. 12, pp. 1198-1203, 2007
M. Itrat B. Shams, K. M. Masum Habib, Q. D. M. Khosru, A. N. M. Zainuddin and Anisul Haque, “On the physically based compact gate C-V model for ultrathin gate dielectric MOS devices using the modified Airy function approximation”, IEEE Transactions on Electron Devices, Vol. 54, No. 9, pp. 2566-2569, 2007
F. Ferdous and Anisul Haque, “Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires”, Journal of Applied Physics, Vol. 101, No. 9, pp. 093106 (1-5), 2007
A. N. M. Zainuddin and Anisul Haque, “An analytical model for electrostatics of strained-Si n-type metal-oxide-semiconductor devices”, Semiconductor Science and Technology, Vol. 22, No. 2, pp. 125-127, 2007
A. E. Islam and Anisul Haque, “Accumulation gate capacitance of MOS devices with ultra-thin high-K gate dielectrics: modeling and characterization”, IEEE Transactions on Electron Devices, Vol. 53, No. 6, pp. 1364-1372, 2006
M. A. Khayer and Anisul Haque, “Analysis of the linewidth enhancement factor (α-factor) in compressively strained InGaAsP quantum wire lasers”, Journal of Applied Physics, Vol. 100, No. 11, pp. 113108(1-6), 2006
F. Ferdous and Anisul Haque, “Elastic strain relaxation in GaInAsP/InP membrane quantum wire lasers”, Semiconductor Science and Technology, Vol. 21, No. 12, pp. 1600-1604, 2006
A. N. M. Zainuddin and Anisul Haque, “Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge”, IEEE Transactions on Electron Devices, Vol. 52, No. 12, pp. 2812-2814, 2005
Anisul Haque, T. Maruyama, H. Yagi, T. Sano, P. Dhanorm and S. Arai, “Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP/InP quantum wire lasers”, IEEE Journal of Quantum Electronics, Vol. 40, No. 9, pp. 1344-1351, 2004
H. Yagi, T. Sano, K. Ohira, P. Dhanorm, T. Maruyama, Anisul Haque, S. Tamura and S. Arai, “GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes”, Japanese Journal of Applied Physics, Vol. 43, No. 6A, pp. 3401-3409, 2004
M. M. A. Hakim and Anisul Haque, “Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics”, Solid-State Electronics, Vol. 48, No. 7, pp. 1095-1100, 2004
Anisul Haque, H. Yagi, T. Sano, T. Maruyama and S. Arai, “Electronic band structures of GaInAsP/InP vertically stacked multiple quantum-wires with strain-compensating barriers”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2018-2023, 2003
H. Yagi, T. Sano, K. Ohira, T. Maruyama, Anisul Haque and S. Arai, “Room temperature-continuous wave operation of GaInAsP/InP multiple-quantum-wire lasers by dry etching and regrowth method”,Japanese Journal of Applied Physics, Vol. 42, Part 2, No. 7A, pp. L748-L750, 2003
T. Sano, H. Yagi, K. Muranushi, S. Tamura, T. Maruyama, Anisul Haque and S. Arai, “Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth”, Japanese Journal of Applied Physics, Vol. 42, Part 1, No. 6A, pp. 3471-3472, 2003
M. M. A. Hakim and Anisul Haque, “A computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures”, Journal of Applied Physics, Vol. 94, No. 3, pp. 2046-2052, 2003
M. Yunus and Anisul Haque, “Wave function penetration effects on current-voltage characteristics of ballistic metal-oxide-semiconductor transistors”, Journal of Applied Physics, Vol. 93, No. 1, pp. 600-604, 2003
M. M. A. Hakim and Anisul Haque, “Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep sub-micron MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1669-1671, 2002
Anisul Haque and M. Z. Kauser, “A comparison of wave function penetration effects on gate capacitance in deep submicron n- and p-MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 9, pp. 1580-1587, 2002
Anisul Haque and K. Alam, “Accurate modeling of direct tunneling hole current in p-metal-oxide-semiconductor devices”, Applied Physics Letters, Vol. 81, No. 4, pp. 667-669, 2002
M. Z. Kauser, M. S. Hasan and Anisul Haque, “Effects of wave function penetration into gate oxide on self-consistent modeling of scaled MOSFETs”, IEEE Transactions on Electron Devices, Vol. 49, No. 4, pp. 693-695, 2002
M. M. Chowdhury, S. Zaman, Anisul Haque and M. R. Khan, “Determination of electron trap distribution in gate-oxide region of deep submicron metal-oxide-semiconductor structure from direct tunneling gate current”, Applied Physics Letters, Vol. 80, No. 12, pp. 2123-2125, 2002
K. Alam, S. Zaman, M. M. Chowdhury, M. R. Khan, and Anisul Haque, “Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistor”, Journal of Applied Physics, Vol. 92, No. 2, pp. 937-943, 2002
A. Rahman and Anisul Haque, “A study into the broadening of quantized inversion layer states in deep submicron MOSFETs”, Solid-State Electronics, Vol. 45, No. 5, pp. 755-760, 2001
Anisul Haque and M. R. Quddus, “Room temperature simulation of a novel quantum wire transistor”,Solid-State Electronics, Vol. 45, No. 3, pp. 519-523, 2001
Anisul Haque, A. Rahman and I. B. Chowdhury, “On the use of appropriate boundary conditions to calculate the normalized wavefunctions in the inversion layers of MOSFETs with ultra-thin gate-oxides”, Solid-State Electronics, Vol. 44, No. 10, pp. 1833-1836, 2000
Anisul Haque and A. N. Khondker, “Quantum transport in mesoscopic devices: current conduction in quantum wire structures”, Journal of Applied Physics, Vol. 87, No. 5, pp. 2553-2560, 2000
Anisul Haque and A. N. Khondker, “An efficient technique to calculate normalized wavefunctions in arbitrary one dimensional quantum well structures”, Journal of Appled Physics, Vol. 84, No. 10, pp. 5802-5804, 1998
A. N. Khondker and Anisul Haque, “Nonequilibrium distribution functions in mesoscopic devices”, Physical Review B, Vol. 55, No. 23, pp. 15798-15803, 1997
A. N. Khondker and Anisul Haque, “Random impurity and phonon scattering processes in mesoscopic devices”, Physical Review B, Vol. 55, No. 7, pp. 4645-4648, 1997
Anisul Haque and A. N. Khondker, “On the conductance and the conductivity of disordered quantum wires”, Journal of Applied Physics, Vol. 80, No. 7, pp. 3876-3880, 1996
Anisul Haque and A. N. Khondker, “Disorder induced enhancement of the quantum size effects in quantum wires with a tunnel barrier”, Physical Review B, Vol. 54, No. 7, pp. 5016-5019, 1996
Anisul Haque and A. N. Khondker, “Electron transport in the presence of random impurities: transition from ballistic to diffusive regimes”, Physical Review B, Vol. 52, No. 15, pp. 11193-11200, 1995
Anisul Haque and A. N. Khondker, “Nonequilibrium transport equation for nonlocal impurity self-energy within the Keldysh formulation”, Physical Review B, Vol. 49, No. 19, pp. 14007-14009, 1994
Anisul Haque, M. Haque and M. R. Khan, “Energy band calculation for periodic potential structures using quantum mechanical impedance”, Journal of Applied Physics, Vol. 68, No. 4, pp. 1661-1664, 1990

Awards & Achievements

2015 Associate Editor of the Month (July ’15), IEEE Access

2015 VPU Team Award of the World Bank, received for contributions to the outstanding achievements of the Bangladesh Identification System for Enhancing Access to Services (IDEA) Project, Bangladesh Election Commission (funded by the World Bank Group)

2010 Bangladesh Academy of Science Gold Medal Award in Physical Sciences (Senior Group)

2009 Distinguished Lecturer, IEEE Electron Devices Society

2006 UGC Award 2006 in Engineering and Technology, Best Paper Award from the University Grants Commission (UGC), Bangladesh

Dr. Anisul Haque

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Academic Background

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